FDS4435BZ/D FDS4435BZ MOSFET P-Channel, POWERTRENCH-30 V, -8.8 A, 20 m Description This PChannel MOSFET is produced using ON Semiconductors advanced POWERTRENCH process that has been especially tailored to minimize the onstate resistance. This device is well suited for Power Management and load
See Product Specifications. Share. Mouser No: 512-FDS4435BZ. Mfr. No: FDS4435BZ. Mfr.: onsemi / Fairchild. Customer No: Description: MOSFET 30V.PCH POWER TRENCH MOSFET. Datasheet: FDS4435BZ Datasheet (PDF) ECAD Model: Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model. More Information.
P-Channel PowerTrench MOSFET. -30V, -8.8A, 20m. Features. Max rDS(on) = 20m at VGS = -10V, ID = -8.8A. Max rDS(on) = 35m at VGS = -4.5V, ID = -6.7A. Extended VGSS range (-25V) for battery applications. HBM ESD protection level of 3.8KV typical (note 3) High performance trench technology for extremely low rDS(on)
This P-Channel MOSFET is produced using Fairchild Semiconductors advanced PowerTrench process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs. D.
Buy FDS4435BZ - Onsemi - Power MOSFET, P Channel, 30 V, 8.8 A, 0.016 ohm, SOIC, Surface Mount. Farnell UK offers fast quotes, same day dispatch, fast delivery, wide inventory, datasheets & technical support.
Buy FDS4435BZ - Onsemi - Power MOSFET, P Channel, 30 V, 8.8 A, 0.016 ohm, SOIC, Surface Mount. Newark offers fast quotes, same day shipping, fast delivery, wide inventory, datasheets & technical support.
This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductors advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V 25V). Applications. Power management. Load switch. Battery protection . October 2001. Features.
General Description. This PChannel MOSFET is produced using onsemis advanced POWERTRENCH process that has been especially tailored to minimize the onstate resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs. Features.
Features. RDS(ON) = 20 m @ VGS = 10 V. RDS(ON) = 35 m @ VGS = 4.5 V. Low Gate Charge (17 nC Typical) Fast Switching Speed. High Performance Trench Technology for Extremely Low RDS(ON) High Power and Current. Handling Capability. This Device is PbFree and Halide Free. ABSOLUTE MAXIMUM RATINGS (TA = 25C unless otherwise noted)
Feb 19, 2021 FDS4435BZ MOSFET P-Channel, POWERTRENCH) -30 V, -8.8 A, 20 mW Description This PChannel MOSFET is produced using ON Semiconductors advanced POWERTRENCH process that has been especially tailored to minimize the onstate resistance.
Semiconductors advanced PowerTrench process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs. MOSFET Maximum Ratings TA = 25C unless otherwise noted Thermal Characteristics
Features. Max RDS(on) = 44 m at VGS = 10 V, ID = 6.7. A. Max RDS(on) = 64 m at VGS = 4.5 V, ID = 5.5 A High Performance Trench Technology for Extremely Low. rDS(on) PbFree, Halide Free and RoHS Compliant. ABSOLUTE MAXIMUM RATINGS. TC = 25C unless otherwise noted.
MOSFET Single, P-Channel, POWERTRENCH , Logic Level FDN358P General Description This PChannel Logic Level MOSFET is produced using onsemi advanced POWERTRENCH process that has been especially tailored to minimize the onstate resistance and yet maintain low gate charge
MOSFET P-Channel, POWERTRENCH , Specified 2.5 V FDC640P General Description This PChannel 2.5 V specified MOSFET uses a rugged gate version of onsemis advanced POWERTRENCH process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5 V ...
FDS4435BZ/D FDS4435BZ MOSFET P-Channel, POWERTRENCH-30 V, -8.8 A, 20 m Description This PChannel MOSFET is produced using ON Semiconductors advanced POWERTRENCH process that has been especially tailored to minimize the onstate resistance. This device is well suited for Power Management and load
Features. Max rDS(on) = 20 m at VGS = 10 V, ID = 8.5 A. Max rDS(on) = 37 m at VGS = 4.5 V, ID = 6.3 A. Extended VGSS Range (25 V) for Battery Applications. High Performance Trench Technology for Extremely Low rDS(on) High Power and Current Handling Capability. HBM ESD Protection Level > 7 kV Typical* 100% UIL Tested.
MOSFET P-Channel, POWERTRENCH-30 V, -8.8 A, 20 m SI4435DY General Description This PChannel MOSFET is a rugged gate version of onsemis advanced POWERTRENCH process. It has been optimized for power management applications requiring a wide range of gave drive voltage