Fds4435bz Pchannel Powertrench Mosfet


FDS4435BZ from DigiPart | FDS4435BZ in Stock

Shop Confidently for FDS4435BZ from ISO9001 and ECIA certified Suppliers. Order Quality FDS4435BZ and Other Parts from Authorized Suppliers

FDS4435BZ MOSFET P-Channel, POWERTRENCH - onsemi

FDS4435BZ/D FDS4435BZ MOSFET P-Channel, POWERTRENCH-30 V, -8.8 A, 20 m Description This PChannel MOSFET is produced using ON Semiconductors advanced POWERTRENCH process that has been especially tailored to minimize the onstate resistance. This device is well suited for Power Management and load

FDS4435BZ Datasheet(PDF) - Fairchild Semiconductor

Features. 8.8 A, 30 V. RDS (ON) = 20 m @ VGS = 10 V. RDS (ON) = 35 m @ VGS = 4.5 V. Extended VGSS range (25V) for battery applications. HBM ESD protection level of 4.5 kV typical (note 3) High performance trench technology for extremely. low RDS (ON) High power and current handling capability.

FDS4435BZ P-Channel PowerTrench MOSFET - Mouser Electronics

General Description. This P-Channel MOSFET is produced using Fairchild Semiconductors advanced PowerTrench process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs. D.

FDS4435 30V P-Channel PowerTrench MOSFET - Digi-Key

This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductors advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V 25V). Applications . Power management Load switch Battery protection . Features .

FDS4435BZ P-Channel PowerTrench MOSFET - Mouser Electronics

FDS4435BZ-F085/D FDS4435BZ-F085 P-Channel PowerTrench MOSFET FDS4435BZ-F085 P-Channel PowerTrench MOSFET-30V, -8.8A, 20m Features General Description This P-Channel MOSFET is produced using ON Semiconductors advanced PowerTrench process that has been especially tailored to minimize the on-state resistance. This device is well suited ...

FDS4435BZ onsemi / Fairchild | Mouser India

Description: MOSFET 30V.PCH POWER TRENCH MOSFET. Datasheet: FDS4435BZ Datasheet (PDF) ECAD Model: Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model. More Information. Learn more about onsemi / Fairchild FDS4435BZ. Compare Product. Add To Project | Add Notes. In Stock: 84,307. Stock:

FDS4435BZ datasheet - 30V P-channel Powertrench Mosfet

FDS4435BZ 30V P-channel Powertrench Mosfet . This P -Channel MOSFET is a rugged gate version of Fairchild Semiconductors advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings 25V)..

FDS4435BZ 30 Volt P-Channel PowerTrench - rom.by

Features. 8.8 A, 30 V. RDS(ON) = 20 m @ VGS = 10 V RDS(ON) = 35 m @ VGS = 4.5 V. Extended VGSS range (25V) for battery applications. HBM ESD protection level of 4.5 kV typical (note 3) High performance trench technology for extremely low RDS(ON) . High power and current handling capability. Termination is Lead-free and RoHS compliant. D.

MOSFET P-Channel, POWERTRENCH - onsemi.cn

DATA SHEET. www.onsemi.com. MOSFET P-Channel, POWERTRENCH. -30 V, -18 A, 20 m. FDMS4435BZ. General Description. This PChannel MOSFET is produced using onsemis advanced POWERTRENCH process that has been especially tailored to minimize the onstate resistance.

FDS4435BZ 4435B 4435 P-Channel PowerTrench MOSFET

Specification: Max rDS (on)= 20milliohms at VGS = -10V, ID= -8.8A. Max rDS (on)= 35milliohms at VGS= -4.5V, ID= -6.7A. Datasheet: https://bit.ly/2Pup7xF. Share: This P-Channel MOSFET is produced using ON Semiconductors advanced PowerTrench process that has been especially tailored to minimize the on-state resistance.

Fds4435Bz: P-Channel Powertrench Mosfet | PDF - Scribd

fds4435b - Free download as PDF File (.pdf), Text File (.txt) or read online for free.

4435 Datasheet - 30V P-Ch PowerTrench MOSFET - Fairchild

Sep 20, 2016 Part Number: 4435, FDS4435. Function: 30V P -Channel PowerTrench MOSFET. Package: SO 8 Pin. Manufacturer: Fairchild. Image. ( 4435 SMD ) Description. This P-Channel MOSFET 4435 is a rugged gate version of Fairchild Semiconductors advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of ...

FDS4435BZ Datasheet(PDF) - Fairchild Semiconductor

Features. Max rDS (on) = 20m at VGS = -10V, ID = -8.8A. Max rDS (on) = 35m at VGS = -4.5V, ID = -6.7A. Extended VGSS range (-25V) for battery applications. HBM ESD protection level of 3.8KV typical (note 3) High performance trench technology for extremely low rDS (on) High power and current handling capability.

FDS7079ZN3 datasheet(1/6 Pages) FAIRCHILD | 30 Volt P-Channel ...

FDS4435BZ: 94Kb / 4P: 30 Volt P-Channel PowerTrench MOSFET FDS6673AZ: 130Kb / 5P: 30 Volt P-Channel PowerTrench MOSFET FDZ208P: 195Kb / 5P: P-Channel 30 Volt PowerTrench BGA MOSFET FDS4935BZ: 154Kb / 5P: Dual 30 Volt P-Channel PowerTrench MOSFET FDS6679: 98Kb / 4P: 30 Volt P-Channel PowerTrench MOSFET FDMC510P: 277Kb / 7P: P-Channel ...

Si P-Channel - 25 V, + 25 V MOSFET - mouser.fr

Filtrage intelligent Lorsque vous slectionnerez un ou plusieurs filtres de paramtres ci-dessous, le filtrage intelligent dsactivera toute valeur non slectionne qui pourr

FDS4435BZ F085 P-Channel PowerTrench MOSFET -30V, -8.8A, 20m - onsemi

FDS4435BZ_F085 P-Channel PowerTrench MOSFET -30V, -8.8A, 20m Product Overview For complete documentation, see the data sheet. This P-Channel MOSFET is produced using an advanced PowerTrench process that has been especially tailored to minimize the on-state resistance.

10pcs FDS4435BZ SOP FDS 4435BZ 4435 BZ 44358Z SOP-8 SMD -30V/-8.8A P ...

10pcs FDS4435BZ SOP FDS 4435BZ 4435 BZ 44358Z SOP-8 SMD -30V/-8.8A P ... ... ne5532 ic

Related searches